features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems sgc2363z 50mhz to 4000mhz active bias silicon germanium cascadable gain block rfmd?s sgc2363z is a high performance sige hbt mmic amplifier utiliz- ing a darlington configuration with a patented active-bias network. the active bias network provides stable current over temperature and process beta variations. designed to run dire ctly from a 3v supply, the sgc2363z does not require a dropping resistor as compared to typical darlington amplifiers. the sgc2363z is designed for high linearity 3v gain block applications that require small size and minimal external components. it is internally matched to 50 ? . gain & return loss v d = 3v, i d = 26ma -30 -20 -10 0 10 20 30 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) gain, rl (db) s11 s21 s22 bias tee data, z s = z l = 50 ohms, t l = 25c ? single, fixed 3v supply ? no dropping resistor required ? patented self-bias circuitry ? p 1db =10.1dbm at 1950mhz ? oip 3 =23dbm at 1950mhz ? robust 1000v esd, class 1c hbm applications ? pa driver amplifier ? cellular, pcs, gsm, umts, wcdma ? if amplifier ? wireless data, satellite ds111011 ? package: sot-363 sgc2363z 50mhz to 4000mhz active bias sili- con germa- nium cascadable gain block parameter specification unit condition min. typ. max. small signal gain 15.5 17.0 18.5 db 850mhz 11.6 13.1 14.6 db 1950mhz 12.3 db 2400mhz output power at 1db compression 10.4 dbm 850mhz 9.1 10.1 dbm 1950mhz 9.6 dbm 2400mhz output third order intercept point 23.0 dbm 850mhz 21.0 23.0 dbm 1950mhz 24.0 dbm 2400 mhz input return loss 12.0 15.0 db 1950mhz output return loss 10.5 14.5 db 1950mhz noise figure 3.7 4.8 db 1930mhz thermal resistance 255 c/w junction - lead device operating voltage 3.0 v device operating current 22.0 26.0 30.0 ma test conditions: v d =3v, i d =26ma typ., oip 3 tone spacing=1mhz, p out per tone=-5dbm, t l =25c, z s =z l =50 ?
2 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgc2363z typical rf performance with application circuit at key operating frequencies typical performance with bias tee, v d =3v, i d =26ma absolute maximum ratings parameter rating unit device current (i ce )55ma device voltage (v ce )4v rf input power* (see note) 12 dbm junction temp (t j )+150c operating temp range (t l ) -40 to +85 c storage temp +150 c esd rating - human body model (hbm) class 1c moisture sensitivity level msl 1 *note: load condition z l =50 ? . operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l and t l =t lead parameter unit 100 mhz 500 mhz 850 mhz 1950 mhz 2400 mhz 3500 mhz small signal gain (g) db 18.4 18.1 17.0 13.1 12.3 9.8 output third order intercept point (oip 3 ) dbm 23.0 23.5 23.0 23.0 24.0 22.0 output power at 1db compression (p 1db ) dbm 12.1 11.0 10.4 10.1 9.6 8.3 input return loss (irl) db 23.5 19.0 18.0 15.0 16.5 14.0 output return loss (orl) db 22.5 18.5 16.5 14.5 13.0 12.5 reverse isolation (s 12 ) db 20.5 21.5 22.0 20.5 20.0 19.0 noise figure (nf) db 2.9 3.0 3.3 3.7 3.9 4.7 test conditions: v d =3v i d =26ma typ. oip 3 tone spacing=1mhz, p out per tone=-5dbm t l =25c z s =z l =50 ? caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. oip3 vs. frequency (-5dbm/tone, 1mhz spacing) 18 20 22 24 26 28 00.5 11.5 22.5 33.5 frequency (ghz) oip3 (dbm) 25c -40c 85c p1db vs. frequency 5 7 9 11 13 15 00.511.522.533.5 frequency (ghz) p1db (dbm) 25c -40c 85c
3 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgc2363z typical performance with bias tee, v d = 3v, i d = 26ma |s11| over frequency -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) s11 (db) 25c -40c 85c |s21| over frequency 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) gain (db) 25c -40c 85c |s12| over frequency -30 -25 -20 -15 -10 -5 0 00.511.522.533.54 frequency (ghz) s12 (db) 25c -40c 85c |s22| over frequency -30 -25 -20 -15 -10 -5 0 00.511.522.533.54 frequency (ghz) s22 (db) 25c -40c 85c nf vs. frequency 1.0 2.0 3.0 4.0 5.0 6.0 0 0.5 1 1.5 2 2.5 3 3.5 frequency (ghz) nf (db) 25c 85c current vs. voltage 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 vd (v) id (ma ) +25c -40c +85c
4 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgc2363z sot-363 pcb pad layout package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. pin function description 3rf in rf input pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of operation. 1, 2, 4, 5 gnd connection to ground. use via holes as close to the device ground as possible to reduce ground inductance and achieve optimum rf performance. 6rf out/dc bias rf output and bias pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of opera- tion. dimensions in inches [millimeters] rf out rf i n notes: 1. provide a large ground pad area under device pins 1, 2, 4, and 5 with several plated-through holes placed as shown. 2. 1-2 ounce finished copper thickness is recommended. 3. rf i/o lines are 50
5 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgc2363z application schematic evaluation board layout application circuit element values reference designator 100-2000mhz 2000-4000mhz c1 1000pf 2.7pf c2 100pf 6.8pf c3 100pf 6.8pf l1 150nh 39nh c3 1000pf 1uf 3 rf in c1 sgc-2363z 4,5 6 1,2 c2 l1 vd rf out c2 c1 l1 1uf 1000pf c3
6 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgc2363z part identification ordering information ordering code description sgc2363z 7? reel with 3000 pieces sgc2363zsq sample bag with 25 pieces sgc2363zsr 7? reel with 100 pieces sgc2363zpck1 100mhz to 2000mhz pcba with 5-piece sample bag SGC2363ZPCK2 2000mhz to 4000mhz pcba with 5-piece sample bag 1 2 3 6 5 4
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